Complementary Silicon
Power Plastic Transistors
These devices are designed for low power audio amplifier and
low-current, high-speed switching applications.
Features
•High Collector-Emitter Sustaining Voltage -
VCEO(sus) = 100 Vdc (Min)
•High DC Current Gain @ IC = 200 mAdc
hFE = 40-200
= 40-120
•Low Collector-Emitter Saturation Voltage -
VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc
•High Current Gain Bandwidth Product -
fT = 40 MHz (Min) @ IC = 100 mAdc
•Annular Construction for Low Leakages
ICBO = 100 nAdc (Max) @ Rated VCB
Pre-Amplifiers
